Utilizes calibrated EUV photodiode to measure the absolute power of incoming beamlines, suitable for harmonic power measurements before and after filtering. Capable of measuring absolute power for both single and multiple wavelengths, it also facilitates precise determinations of transmittance and reflectance.
Technology Pathway | Light Source Characteristics | Wavelength | Power Output | Maximum Repetition Rate | Representative Applications | Downstream Application Examples and Representative Companies |
Accelerated Electron Beam Technology | Large-scale Scientific Facilities, Lasers, and Free-Electron Lasers | 0.1nm-100nm | 1mW-1W | 100 kHz | Research | Europe XFEL United States LCLS |
Discharge Plasma | Incoherent Light, Technically diverse and cost-intensive. | 13.5nm | 100-500 W | 50-100 kHz | Lithography | ASML(Cymer) |
Nonlinear optics applications (companies) | Full-spectrum lasers featuring compact size and low cost, quasi-continuous comb-like ultra-wide spectral range | 10nm – 100nm | 0.1 mW-1mW | 10-100 kHz | Defect detection, microscopy laser direct writing lithography, and photoresist development, among others. | Intel ASML TSMC Samsung |
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