EUV Imaging Spectrometer: Equipped with a front-end EUV spectrometer for selecting specific EUV wavelengths, featuring a large vacuum chamber housing multiple motorized vacuum mirror mounts and a multi-axis sample stage with adjustable degrees of freedom. It also incorporates a wide-spectral-response EUV camera with selectable target surfaces, catering to mono-/multi-chromatic imaging and spectroscopy needs from visible to EUV light.
Interference Lithography System: Boasts a spacious vacuum chamber with a highly automated interference module adjustable for interferometric lithography applications across visible to EUV spectra. Optionally, imaging camera can be integrated for auxiliary measurements.
Technology Pathway | Light Source Characteristics | Wavelength | Power Output | Maximum Repetition Rate | Representative Applications | Downstream Application Examples and Representative Companies |
Accelerated Electron Beam Technology | Large-scale Scientific Facilities, Lasers, and Free-Electron Lasers | 0.1nm-100nm | 1mW-1W | 100 kHz | Research | Europe XFEL United States LCLS |
Discharge Plasma | Incoherent Light, Technically diverse and cost-intensive. | 13.5nm | 100-500 W | 50-100 kHz | Lithography | ASML(Cymer) |
Nonlinear optics applications (companies) | Full-spectrum lasers featuring compact size and low cost, quasi-continuous comb-like ultra-wide spectral range | 10nm – 100nm | 0.1 mW-1mW | 10-100 kHz | Defect detection, microscopy laser direct writing lithography, and photoresist development, among others. | Intel ASML TSMC Samsung |
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