EUV Beam Splitter

The EUV beam splitter boasts a high reflectivity for extreme ultraviolet light (>70%) while maintaining a high transmission rate for infrared light (>65%). Its primary function is to filter out the majority of the high-energy, fundamental frequency, femtosecond infrared light from the emitted beam. Composed of dual electric motor modules and an EUV camera feedback unit, it leverages an in-house developed algorithm for EUV beam pointing stabilization, thereby enabling the stable pointing and locking of the EUV beam.

Main Features

Effective with high performance, and equipped with miniaturized devices

HHG light sources feature a compact footprint, enabling the setup of a complete system within the confines of a laboratory space, making it more suitable for productization

Short wavelength, high precision.

EUV technology utilizes wavelengths shorter than those of DUV technology, facilitating higher resolution. Deep Ultraviolet (DUV) typically employs light sources with wavelengths above 100 nm, whereas Extreme Ultraviolet (EUV) technology employs light sources with a wavelength of 13.5 nm.

Based on coherence, lenses are not required.

Coherence enables lensless imaging techniques, such as coherent diffraction imaging, ptychography, and holography, which offer spatial resolution at EUV wavelengths for non-destructive evaluation and assessment.

Technical Parameter

Technology Pathway	Light Source Characteristics	Wavelength	Power Output	Maximum Repetition Rate	Representative Applications	Downstream Application Examples and Representative Companies
Accelerated Electron Beam Technology	Large-scale Scientific Facilities, Lasers, and Free-Electron Lasers	0.1nm-100nm	1mW-1W	100 kHz	Research	Europe XFEL United States LCLS
Discharge Plasma	Incoherent Light, Technically diverse and cost-intensive.	13.5nm	100-500 W	50-100 kHz	Lithography	ASML(Cymer)
Nonlinear optics applications (companies)	Full-spectrum lasers featuring compact size and low cost, quasi-continuous comb-like ultra-wide spectral range	10nm – 100nm	0.1 mW-1mW	10-100 kHz	Defect detection, microscopy laser direct writing lithography, and photoresist development, among others.	Intel ASML TSMC Samsung

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